Conversion Gain Modulation Using Charge Sharing Pixel

ABSTRACT

An image sensor including an array of pixel elements is operated according to two operation modes to modulate the conversion gain of the pixel to operate the image sensor based on the impinging light conditions. More specifically, an image sensor pixel element is operated in a high conversion gain mode for low light conditions and in a low conversion gain mode for bright light conditions. The low conversion gain mode implements charge sharing between the floating diffusion and the photodiode. The low conversion gain mode further implements partial reset where the photodiode and the floating diffusion are reset to the same potential and to a potential slightly less than the pinning voltage of the photodiode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional PatentApplication Ser. No. 61/429,162, filed on Jan. 2, 2011, whichapplication is incorporated herein by reference in its entirety.

FIELD OF THE INVENTION

The invention relates to image sensors and, in particular, to imagesensors with multiple conversion gain settings.

DESCRIPTION OF THE RELATED ART

CMOS image sensor pixel circuits formed using four transistors are knownand are referred to as 4T image sensor pixels or “4T pixels.” In 4T CMOSimage sensor pixels, the photodiode (PD) provides the photon to electronconversion, while the floating diffusion (FD) provides the electron tovoltage conversion. The voltage per electron conversion of the FD isknown as conversion gain (CG) and is an important parameter for CMOSimage sensors. Conversion gain boosts the pixel signal relative to theanalog noise, thereby reducing the noise floor, and thereby enablingperformance at lower light levels. For large size pixels, low lightsensitivity can be limited by the CG of the FD. In particular, in lowlight conditions, high gain is required and thus, low FD nodecapacitance is desired. However, in bright light conditions, high FDcapacitance is desired to collect all of the charge from the photodiode.High FD capacitance makes the pixel gain low.

FIG. 1 is a schematic diagram of a conventional 4T CMOS image sensorpixel. Typically, pixel 10 will have a large FD capacitance to enablecollection of all charge collected by the photodiode in high light orbright light conditions, enabling high shot noise limited SNR.Therefore, the pixel will suffer from low CG in low light conditions,leading to reduced sensitivity, particularly in low light conditions.

In some cases, a pixel circuit is configured with a FD capacitance thatcan be switched from a high value in high light conditions to a lowvalue in low light conditions. One known method of accomplishing this isusing dual gain pixels, in which the FD is designed with small baselinecapacitance, but attached to an additional capacitor element by atransistor, as shown in FIG. 2, to introduce additional capacitance tothe FD node when needed. In low light conditions, the gate controlsignal DCG is off and transistor M5 is disabled. Therefore, the FD nodeprovides only the low baseline capacitance. However, in high lightconditions, the gate control signal DCG is turned on and transistor M5is enabled, connecting the additional capacitor element C5 to the FDnode 14, thereby increasing the baseline FD capacitance. However, thismethod requires two additional elements (transistor M5 and capacitor C5)added to the pixel circuit and so reduces the pixel fill factor(reducing sensitivity and photodiode full well). Additionally, the gateelectrode of the additional transistor M5 increases the floatingdiffusion capacitance even when the transistor is turned off, due to theextra metal wiring and gate capacitances. The additional capacitancefrom the additional transistor M5 reduces the pixel's low lightsensitivity.

SUMMARY OF THE INVENTION

According to one embodiment of the present invention, an image sensingdevice includes an array of light sensing elements where each lightsensing element includes a photodiode and multiple control transistors.The control transistors include at least a transfer gate transistor anda reset transistor. The transfer gate transistor has a drain terminalbeing a floating diffusion node and a source terminal coupled to thephotodiode. The reset transistor has a drain terminal coupled to a resetlevel voltage and a source terminal coupled to the floating diffusionnode. Each light sensing element generates an output pixel voltageindicative of an intensity level of light impinging on the photodiode.The control transistors are configured to control reset, lightintegration, charge transfer and data read operations of each lightsensing element. In operation, the light sensing element is configuredto selectively operate in a first operation mode for high conversiongain or a second operation mode for low conversion gain. The reset levelvoltage is a positive power supply voltage in the first operation modeand the reset level voltage is a voltage slightly less than a pinningvoltage of the photodiode in the second operation mode. Furthermore, inthe second operation mode, the photodiode and the floating diffusionnode are reset to about the same voltage potential and are reset to avoltage potential below the pinning voltage during the reset operationof the light sensing element.

According to another aspect of the present invention, a method in animage sensing device includes providing an array of light sensingelements where each light sensing element includes a photodiode andmultiple control transistors. The control transistors include at least atransfer gate transistor and a reset transistor where the transfer gatetransistor has a drain terminal being a floating diffusion node and asource terminal coupled to the photodiode and the reset transistor has adrain terminal coupled to a reset level voltage and a source terminalcoupled to the floating diffusion node. The control transistors areconfigured to control reset, light integration, charge transfer and dataread operations of each light sensing element. The method furtherincludes generating at each light sensing element an output pixelvoltage indicative of an intensity level of light impinging on thephotodiode, operating one or more light sensing elements in a firstoperation mode for high conversion gain or a second operation mode forlow conversion gain, providing a positive power supply voltage for thereset level voltage to operate a light sensing element in the firstoperation mode, providing a voltage slightly less than a pinning voltageof the photodiode to operate a light sensing element in the secondoperation mode, and resetting one or more light sensing elements in thesecond operation mode where the photodiode and the floating diffusionnode are reset to about the same voltage potential and are reset to avoltage potential below the pinning voltage.

The present invention is better understood upon consideration of thedetailed description below and the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a conventional 4T CMOS image sensorpixel.

FIG. 2 is a schematic diagram of a conventional 4T CMOS image sensorpixel with dual conversion gain obtained with an extra capacitor andtransistor.

FIG. 3 is a schematic diagram of a 4T CMOS image sensor pixel configuredfor conversion gain modulation according to one embodiment of thepresent invention.

FIG. 4 is a timing diagram for the 4T pixel circuit of FIG. 3 whenoperating in the high CG mode according to one embodiment of the presentinvention.

FIG. 5 is a top view of a layout of a 4T CMOS image sensor pixelaccording to one embodiment of the present invention.

FIG. 6, which includes FIGS. 6( a) to 6(e), illustrates the potentialdiagrams of the 4T pixel circuit of FIG. 3 when operating in the high CGmode according to one embodiment of the present invention.

FIG. 7, which includes FIGS. 7( a) to 7(e), illustrates the potentialdiagrams of the 4T pixel circuit of FIG. 3 when operating in the low CGmode according to one embodiment of the present invention.

FIG. 8 is a timing diagram for CSM Operation Mode A1, utilizing singlereadout, with the transfer gate set low during the integration timeaccording to one embodiment of the present invention.

FIG. 9 is a timing diagram for CSM Operation Mode A2, utilizing singlereadout, with the transfer gate set high during integration and readoutaccording to one embodiment of the present invention.

FIG. 10 is a timing diagram for CSM Operation Mode A3, utilizing singlereadout, with the transfer gate set low during integration and readoutaccording to one embodiment of the present invention.

FIG. 11 is a timing diagram for CSM Operation Mode B1, utilizingmulti-readout, with the transfer gate always high according to oneembodiment of the present invention.

FIG. 12 is a timing diagram for CSM Operation Mode B2, utilizingmulti-readout, with the transfer gate toggling and set to high duringdata read according to one embodiment of the present invention.

FIG. 13 is a timing diagram for CSM Operation Mode B3 utilizingmulti-readout, with the transfer gate toggling and set low during dataread according to one embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In accordance with the principles of the present invention, an imagesensor including an array of pixel elements is operated according to twoor more operation modes to modulate the conversion gain of the pixel.More specifically, the conversion gain (CG) of the pixel is altered byoperating the pixel in at least two different operation modes based onthe impinging light conditions so that conversion gain modulation isachieved without additional pixel circuitry or introducing additionalparasitic capacitances. In some embodiments, the conversion gain of thepixel is modulated by charge sharing between the floating diffusion andthe photodiode.

In embodiments of the present invention, the pixel is operated in one oftwo operation modes to modulate the conversion gain. A high conversiongain (high CG) mode is used for low light conditions while a lowconversion gain mode is used for bright light conditions. In particular,in low light conditions, the floating diffusion (FD) capacitance isminimized to maximize the conversion gain, thereby achieving highsensitivity. However, in bright light conditions, the pixel is operatedin a low conversion gain mode (low CG), also referred to as the chargesharing mode (CSM), in which the photodiode not only provides the photonto electron conversion, but also provides charge storage. In thismanner, the effective floating diffusion capacitance is maximized whileminimizing the conversion gain, thereby effectively increasing theoverall storage capability of the pixel while reducing the sensitivityin bright light conditions. In some embodiments, the photodiode providessome of the electron to voltage conversion as well.

Selection between the operation modes can be accomplished automaticallyusing data describing the light levels impinging on the image sensor.Alternately, the operation modes can be selected manually by user input.In one embodiment, the image sensor selects the low CG or high CG modeusing control data from the imaging system incorporating the imagesensor. The control data indicates the light level of the incidentlight. For example, control data from the automatic gain control (AGC)of the imaging system may be used for mode selection. In someembodiments, the image sensor may use data from certain pixels of thepixel array as an indicator of the light conditions. In this manner, themode selection can be performed on the array level or on aregion-by-region basis, as described in more detail below.

Operation Modes Overview

FIG. 3 is a schematic diagram of a 4T CMOS image sensor pixel configuredfor conversion gain modulation according to one embodiment of thepresent invention. In the present description, a CMOS image sensor pixelwith a non-shared readout scheme, as shown in FIGS. 3 and 4, is used todescribe the conversion gain modulation in accordance with embodimentsof the present invention. The use of a non-shared readout scheme for theimage sensor pixel is illustrative only. The conversion gain modulationscheme of the present invention can be applied to other pixelarchitecture and layouts, including a shared read output scheme wheretwo or more photodiodes share the same floating diffusion node. Also,the conversion gain modulation scheme of the present invention can beapplied to other readout schemes including digital pixel readout.

Referring to FIG. 3, a pixel circuit 80 implementing a 4T active pixeldesign includes a photodiode (PD) and four control transistors M1 to M4.In the present embodiment, control transistors M1 to M4 are NMOStransistors and operate in concert to control the reset, lightintegration, charge transfer and data read operations of the pixelelement. More specifically, transistor M2 is the reset transistorcontrolled by a reset signal (RST); transistor M4 is the row selecttransistor controlled by a row select signal (RS); transistor M1 is thetransfer gate controlled by a transfer gate signal (Tg); and finally,transistor M3 is gated by the floating diffusion FD (node 14) to sensethe charge transferred from the photodiode PD. The 4T pixel circuit 80can be used to form an image sensor including a one-dimensional or atwo-dimensional array of light sensing elements or pixel elements, eachpixel element being constructed as the 4T pixel circuit 80.

The basic operation of the 4T pixel circuit 80 is as follows. In the 4Tactive pixel element 80, when both the reset signal RST and the transfergate signal Tg are set to a logical high level, the photodiode PD isreset to a voltage determined by the reset level voltage V_(RL) at thedrain terminal (node 17) of the reset transistor M2. When the resetlevel voltage V_(RL) is set to the power supply voltage Vdd, thephotodiode PD is reset to its pinning voltage, which is typically in the0.8 to 1.5 volt range dependent on the fabrication technology. In aconventional pixel circuit, the drain terminal (node 17) of the resettransistor M2 is connected directly to the power supply voltage Vdd.However, in embodiments of the present invention, in pixel circuit 80,the reset level voltage V_(RL) is switchably connected to the Vddvoltage (node 87) and a partial reset voltage Vpr (node 88) to implementmultiple operation modes for conversion gain modulation, as will bedescribed in more detail below. In some embodiments, the source followertransistor M3 and the reset transistor M2 have their drain terminalsconnected to separate voltage supplies, as shown in FIG. 3.

After the photodiode reset operation is completed, the reset signal RSTreturns to a low state. Then, when the transfer gate signal Tg goes lowand the transfer gate M1 is turned off, the photodiode PD is isolatedfrom the rest of the circuit and the photodiode is in a state operativeto integrate photons from the incident light, i.e. the photodiode ischarged in response to incident light. The photodiode is thereforeoperated in the light integration period. Meanwhile, the reset voltagevalue, present on the floating diffusion FD node 14, can be read out ofthe pixel element. To read the reset voltage value, the reset signal RSTis kept low and reset transistor M2 is kept off. Meanwhile, the rowselect signal RS is switched high and the row select transistor M4 isturned on to connect the reset voltage at the floating diffusion FD,through transistors M3, to the output voltage node 18 as the outputpixel voltage Vout. The output pixel voltage Vout is passed to a bitline20 which may be biased by a current source providing a current I_(col).From the bitline 20, the reset voltage may be stored at a circuitexternal to the pixel array for use in the operations of the pixelarray, such as for cancellation of the reset voltage values. The resetvoltage on bitline 20 may also be provided to an analog-to-digitalconverter (ADC) formed outside of the pixel array to digitize the sensedvoltage value before storing the reset voltage value.

In the present illustration, an analog storage circuit 24 coupled tobitline 20 is used to store the reset voltage value and also the pixelvoltage value provided on the bitline 20. In the present embodiment, theanalog storage circuit 24 is implemented as a sample-and-hold circuitwhere a first switch connects the bitline to a first capacitor and asecond switch connects the bitline to a second capacitor. A controlsignal SH-R controls the first switch to sample the reset voltage valueonto the first capacitor. A control signal SH-S controls the secondswitch to sample the light-dependent pixel voltage value onto the secondcapacitor. The analog storage circuit 24 stores the sampled output pixelvoltage Vout sensed on bitline 20 on their respective capacitors. Whenthe reset voltage value is presented on bitline 20 and control signalSH-R is asserted, a pixel reset value D_(RST) is sampled onto the firstcapacitor.

At the end of the light integration period, the charge collected by thephotodiode can be read out. To do so, the transfer gate signal Tg isswitched high to turn on the transfer gate transistor M1 to transfer thecharge from the photodiode PD (node 12) to the floating diffusion FD(node 14). In conventional operation, the transfer gate signal Tg isswitched low to turn off the transfer gate M1 after the charge has beentransferred so as to isolate the floating diffusion from the photodiode.Readout of the light dependent pixel voltage then proceeds by settingthe row select signal RS to high to turn on row select transistor M4.The pixel voltage value is then provided through transistor M3 to theoutput voltage node 18 as the output pixel voltage Vout. The pixelvoltage value is passed to the bitline 20. In the present illustration,the light-dependent pixel voltage value is stored in the analog storagecircuit 24. More specifically, the control signal SH-S controlling thesecond switch in the analog storage circuit 24 is asserted to sample thepixel voltage value onto the second capacitor. The output pixel voltageVout on bitline 20 is then converted to a light dependent pixel valueD_(PD). In some embodiments, correlated double sampling (CDS) may beimplemented where the pixel reset value previously recorded is cancelledfrom the light dependent pixel value to generate a corrected outputpixel value without noise or errors due to non-uniformity of the pixelelements in the array.

The 4T CMOS image sensor pixel circuit 80 in FIG. 3 has the sametransistor configuration as a conventional 4T pixel. However, inaccordance with embodiments of the present invention, the drain terminal(node 17) of the reset transistor M2 is configured to be switchablyconnected to either the positive power supply voltage Vdd (node 87) ofthe image sensor or to a partial reset voltage Vpr (node 88). Thepartial reset voltage Vpr has a voltage value slightly less than thepinning voltage Vpin. The voltage at the drain terminal (node 17) ofreset transistor M2 establishes the reset level of the photodiode andthe voltage is referred to herein as the reset level voltage V_(RL). Thereset level voltage V_(RL) determines the operation mode of the pixelcircuit 80. When the reset level voltage V_(RL) is connected to thepower supply voltage Vdd (node 87), the pixel circuit 80 is operated inthe high CG mode. When the reset level voltage V_(RL) is connected tothe partial reset voltage Vpr (node 88), the pixel circuit 80 isoperated in the low CG mode. In embodiments of the present invention,voltage selection for the reset level voltage V_(RL) is realized by amode select signal 90. The mode select signal 90 can be generated byautomatic control based on the light level sensed by the image sensor.Alternately, the mode select signal 90 can be generated by manualselection through user input.

In embodiments of the present invention, the pixel circuit 80 isoperated in the high CG mode in low light conditions where the FDcapacitance is minimized. In the high CG mode, the reset level voltageVRL (node 17) is connected to the power supply Vdd voltage node 87. Thehigh CG mode uses the conventional 4T pixel timing, in which thephotodiode is reset and readout in a conventional manner, as shown inthe timing diagram of FIG. 4 for a 4T pixel. In FIG. 4, the reset signalRST is shown by curve 102, the transfer gate signal Tg is shown by curve104, the row select signal RS is shown by curve 106, the control signalSH-R is shown by curve 108 and the control signal SH-S is shown by curve110.

Referring to FIG. 4, the conventional 4T pixel timing involves resettingthe photodiode to its pinning voltage (Vpin) during the Reset period.Then, light integration starts when the transfer gate signal Tg isdeasserted. During the light integration period, the pixel reset voltagevalue may be read out during a Rest Read period. Then after lightintegration, the transfer gate (Tg) is turned on to transfer the entirecollected charge on the photodiode (PD) to the floating diffusion (FD).After all charge has been transferred, the transfer gate is turned off,and the floating diffusion (FD) is read out during the Data Read period.

The operation of the 4T pixel circuit 80 can be further described usingpotential diagrams illustrating the voltage levels at different nodes ofthe pixel circuit. FIG. 5 is a top view of a layout of a 4T CMOS imagesensor pixel according to one embodiment of the present invention.Referring to FIG. 5, the transfer gate transistor (with control signalTg) is formed between the floating diffusion FD and the photodiode PD ofthe pixel circuit. The reset transistor gate is formed between thefloating diffusion FD and a diffusion being the drain terminal of thereset transistor receiving the reset level voltage V_(RL). FIG. 5illustrates a representative layout of the pixel circuit and is notintended to be limiting. In the following description, potentialdiagrams of the pixel circuit 80 across the cross-section line A-A′under different operating conditions are provided to illustrate theoperation of the pixel circuit. In the present description, thepotential diagrams are illustrative only and are not intended to be anabsolutely technically correct representation of the energy potentialsat different parts of the image sensor pixel. Rather, the potentialdiagrams are provided mainly to demonstrate pictorially the potentialvalues and changes in potential values of different parts of the imagesensor pixel during various pixel operations.

FIG. 6, which includes FIGS. 6( a) to 6(e), illustrates the potentialdiagrams of the 4T pixel circuit of FIG. 3 when operating in the high CGmode according to one embodiment of the present invention. In thepresent illustration, the positive power supply voltage Vdd of the pixelcircuit is assumed to be 3.3V. Referring to FIG. 6, the pixel circuit inan initial state (FIG. 6( a)) may have undetermined voltage values atthe photodiode PD and the floating diffusion FD. Thus, before any lightintegration process, the photodiode PD needs to be reset. The resetoperation is carried out by asserting the reset signal RST and thetransfer gate signal Tg to a logical high level, that is to the Vddvoltage (3.3V). The reset transistor and the transfer gate transistorare both turned on. In the high CG mode of operation, the reset levelvoltage V_(RL) is coupled to the power supply Vdd voltage (3.3V) andthus the drain terminal of the reset transistor is connected to the Vddvoltage. In the present illustration, the reset signal RST is boosted sothat the reset transistor has a gate voltage larger than the Vddvoltage. During the reset operation, the floating diffusion FD iselectrically shorted to the reset level voltage V_(RL) and thephotodiode PD is emptied of charge. The photodiode PD is reset to itspinning voltage Vpin while the floating diffusion FD is reset to the Vddvoltage. The photodiode PD and floating diffusion FD are thus set todifferent potentials, as shown in FIG. 6( b). After the reset operation,the reset signal RST is deasserted and the transfer gate signal Tg isalso deasserted, as shown in FIG. 6( c). The photodiode PD is thereforeisolated from the floating diffusion FD. Light integration can thenbegin and the photodiode PD collects charge from the impinging light, asshown in FIG. 6( d).

After the light integration operation, the charged collected at thephotodiode PD can be read out, as shown in FIG. 6( e). The transfer gatesignal Tg is asserted and the charge collected by the photodiode PD aretransferred to the floating diffusion through the channel of thetransfer gate transistor. In the present illustration, the transfer gatesignal Tg is boosted to a value greater than the Vdd voltage. The dataread out process is complete when all the charge collected by thephotodiode has been transferred to the floating diffusion. In thepresent embodiment, a voltage headroom—being FD potential minusVpin—should be large enough to keep current flowing from the photodiodePD, and to prevent backwash of electrons into the photodiode PD when thetransfer gate signal Tg is turned off.

The potential diagrams of FIG. 6 illustrate the operation of the 4Tpixel circuit 80 of FIG. 3 under the high CG mode where the floatingdiffusion capacitance is minimized to optimize the sensitivity of thepixel. In embodiments of the present invention, the 4T pixel circuit 80can also be operated under the low CG mode where the floating diffusioncapacitance is maximized in a charge sharing mode to improve brightlight sensing.

The low CG mode of operation for bright light conditions uses chargesharing between the photodiode PD and floating diffusion FD to increasethe effective capacity of the floating diffusion. The low CG mode isused in bright light conditions requiring a floating diffusion capacitythat would ordinarily be too high for a high conversion gain/lowcapacitance floating diffusion need for low light conditions. A keyaspect of the low CG mode is to reset the pixel circuit such that thephotodiode and the floating diffusion are at substantially the samepotential and are below the pinning voltage (Vpin) of the photodiode.

FIG. 7, which includes FIGS. 7( a) to 7(e), is a potential diagram ofthe 4T pixel circuit of FIG. 3 when operating in the low CG modeaccording to one embodiment of the present invention. In theillustration shown in FIG. 7, as in FIG. 6, the positive power supplyvoltage Vdd of the pixel circuit is assumed to be 3.3V. Referring toFIG. 7, the pixel circuit in an initial state (FIG. 7( a)) may haveundetermined voltage values at the photodiode PD and the floatingdiffusion FD. Thus, before any light integration process, the photodiodePD needs to be reset. The reset operation is carried out by assertingthe reset signal RST and the transfer gate signal Tg to a logical highlevel, that is to the Vdd voltage (3.3V), as shown in FIG. 7( b). Thereset transistor and the transfer gate transistor are both turned on. Inthe low CG mode of operation, the reset level voltage V_(RL) is coupledto the partial reset voltage Vpr so that the drain terminal of the resettransistor is connected to the Vpr voltage which has a voltage valueslightly less than the pinning voltage Vpin. In the present embodiment,the partial reset voltage Vpr is about 1.25V. During the resetoperation, the floating diffusion FD is electrically shorted to thereset level voltage V_(RL) having the partial voltage Vpr value andfurther shorted to the photodiode PD. Accordingly, the photodiode PD andthe floating diffusion FD are reset to the same bias level and the biaslevel is slightly below the photodiode pinning voltage Vpin, As shown inFIG. 7( b). Resetting the photodiode and the floating diffusion to a Vprvoltage level slightly below the pinning voltage is referred herein as a“partial reset” operation.

After the partial reset operation, the reset signal RST is deassertedand the transfer gate signal Tg is also deasserted, as shown in FIG. 7(c). The photodiode PD is therefore isolated from the floating diffusionFD. Light integration can then begin and the photodiode PD collectscharge from the impinging light, as shown in FIG. 7( d).

After light integration, the charged collected at the photodiode PD canbe read out, as shown in FIG. 7( e). The transfer gate signal Tg isasserted and the charge collected by the photodiode PD are transferredto the floating diffusion through the channel of the transfer gatetransistor. However, in the low CG operation mode, the transfer gateremains turned on during the signal read phase so that the combinedsignal at the floating diffusion FD, the transfer gate transistor andthe photodiode PD is read out. Since the floating diffusion andphotodiode were reset to substantially the same voltage, after thetransfer gate is turned on, the charge equilibrates between the floatingdiffusion FD and the photodiode PD, rather than transferring entirely tothe floating diffusion FD. The combined PD/transfer gate/FD structurethen acts as the read out node, providing a large charge storage.

In some embodiments, the transfer gate remains normally off during lightintegration, but is periodically switched on to partially transfercharge to the floating diffusion in advance of charge read out. Thetransfer gate is then kept on during readout, but is turned off againwhen readout is completed. In other embodiments, the transfer gate canbe turned on periodically to implement multi-sampling readouts, as willbe explained in more detail below.

In other embodiments, the transfer gate remains normally off duringlight integration, but is periodically switched on to partially transfercharge to the floating diffusion in advance of charge readout. In thismode, the transfer gate is switched off prior to readout so that readoutoccurs with higher conversion gain. May other operation modes arepossible for implementing the low CD operation modes, as will beexplained in more detail below.

Low CG/Charge Sharing Mode

The operation of the low CG mode, also referred to as the charge sharingmode (CSM), for bright light conditions will now be described in moredetails.

First, the pinning voltage of a photodiode is described. In the presentdescription, the photodiode's pinning voltage refers to the voltageapplied to the photodiode at which the photo collection region of thephotodiode is fully depleted. More specifically, a photodiode is a PNjunction or PIN junction. The photo collection region of the photodiodeis an n-type region sandwiched between a surface p-type region and anepi/bulk p-type region. When a positive bias is applied to the n-typephoto collection region, depletion regions form at the two n/pinterfaces. As positive bias is increased, the depletion region fromn/surface p becomes deeper, while the depletion region from the n/epi pmoves to the surface. At a certain bias voltage, the two depletionregions meet and the n-type photo collection region is fully depleted.That bias voltage is the pinning voltage of the photodiode.

In CSM operation, the photodiode PD is partially reset to a voltage lessthen the photodiode's pinning voltage Vpin. More specifically, in thelow CG or CSM mode, the photodiode is reset to the partial reset voltage(Vpr) which is less than the photodiode pinning voltage and thephotodiode is therefore not fully depleted. Furthermore, the FD is resetto substantially the same voltage as the photodiode PD, as shown in thepotential diagram of FIG. 7( b). This reset operation is referred to asthe “partial reset” operation. Partial reset is accomplished by settingthe drain voltage (V_(RL)) of the reset transistor M2 to the partialreset voltage Vpr which is below the PD pinning voltage Vpin. Then, thereset signal RST is set to a voltage higher than Vpr+V_(t) to reset thefloating diffusion FD (V_(t) denotes the threshold voltage of the NMOStransistors in the pixel circuit). Meanwhile, the transfer gatetransistor is set to a voltage higher than Vpr+V_(t) to reset thephotodiode PD. When partial reset is used, the photodiode PD noise canbe higher, and low light FPN (fixed pattern noise) may be higher (due todependence on the reset transistor drain voltage). However, because thelow CG mode is used primarily for bright light conditions, theseartifacts will be negligible.

In embodiments of the present invention, there are two readout schemesthat can be used with the CSM operation: single read out per frame, ormultiple readouts per frame (which can be applicable to a digital pixelwhich generates digital output data at each pixel). Each of thesereadout schemes can be further broken down into whether the transfergate signal Tg is held closed during integration and/or readout. In thefollowing description, six readout schemes under the CSM operation aredescribed. The description provided herein is illustrative only and notintended to be limiting. One of ordinary skill in the art, upon beingapprised of the present description, would appreciate that the CSM modeand the partial reset operation can be applied to various pixel timingschemes and pixel readout schemes to modulate the conversion gain forhigh and low light conditions.

Single Readout Schemes

Mode A1

In a first embodiment, a first CSM operating mode (Mode A1) isconfigured for single read out per frame with the transfer gate signalTg set low during integration and set high during readout.

FIG. 8 is a timing diagram for CSM Operation Mode A1, utilizing singlereadout, with the transfer gate set low during the integration timeaccording to one embodiment of the present invention. Under Mode A1operation, a partial reset is performed by asserting the reset signalRST (curve 102) to turn on the reset transistor and asserting thetransfer gate signal Tg (curve 104) to turn on the transfer gatetransistor. The reset level voltage V_(RL) is set to the partial resetvoltage (curve 103). Accordingly, the photodiode and the floatingdiffusion are reset to the same potential which is a voltage value thatis slightly less than the pinning voltage of the photodiode.

Light integration begins when the reset signal RST is deasserted. Thetransfer gate Tg remains asserted to allow the reset voltage value to beread out. More specifically, during the reset read period (RST Read),the row select signal RS (curve 106) and the control signal SH-R (curve108) are asserted in turn to read out the reset voltage value at thePD/Tg/FD node. The transfer gate signal Tg is deasserted after the resetread operation.

When light integration is complete, the reset signal RST is kept low,while the transfer gate signal Tg is set high. Charge collected by thephotodiode is then distributed to the floating diffusion. In someembodiments, the transfer gate signal Tg may be boosted to minimize lag.Boosting involves raising the transfer gate signal Tg which is the gatevoltage of the transfer gate transistor above the power supply voltageVdd. After the floating diffusion FD charge reaches steady state, thetransfer gate signal Tg remains asserted (logical high) while the pixeldata is read out. More specifically, during the data read period, therow select signal RS (curve 106) and the control signal SH-S (curve 110)are asserted in turn to read out the light-dependent pixel voltage valueat the PD/Tg/FD node. The transfer gate signal Tg is deasserted afterthe data read operation. A partial reset can then performed to start thenext frame.

Under mode A1, the transfer gate signal Tg is kept on during signalread. Also, mode A1 requires that the reset read (RST read) be carriedout immediately after the partial reset. As thus configured, mode A1will have a full well proportional to the sum of the PD and FDcapacities at voltage Vpr. The conversion gain will be inverselyproportional to the sum of the PD, FD, and Tg capacitances.

Mode A2

In a second embodiment, a second CSM operating mode (Mode A2) isconfigured for single readout with the transfer gate signal Tg set highduring integration and read out.

FIG. 9 is a timing diagram for CSM Operation Mode A2, utilizing singlereadout, with the transfer gate set high during integration and readoutaccording to one embodiment of the present invention. Under Mode A2operation, a partial reset is performed by asserting the reset signalRST (curve 102) to turn on the reset transistor and asserting thetransfer gate signal Tg (curve 104) to turn on the transfer gatetransistor. The reset level voltage V_(RL) is set to the partial resetvoltage (curve 103). Accordingly, the photodiode and the floatingdiffusion are reset to the same potential which is a voltage value thatis slightly less than the pinning voltage of the photodiode.

Light integration begins when the reset signal RST is deasserted. Thetransfer gate Tg remains asserted to allow the reset voltage value to beread out during the RST Read period. Furthermore, contrary to Mode A1operation, the transfer gate signal Tg remains asserted after the resetread operation and remains asserted during the entire light integrationperiod. In this manner, charge collected by the photodiode iscontinuously distributed between the photodiode and the floatingdiffusion throughout the integration period.

Light integration is complete when data read is performed. During dataread period, the reset signal RST is kept low, the transfer gate signalTg is kept high. The row select signal RS (curve 106) and the controlsignal SH-S (curve 110) are asserted in turn to read out thelight-dependent pixel voltage value at the PD/Tg/FD node. The transfergate signal Tg is deasserted after the data read operation. A partialreset can then performed to start the next frame.

In mode A2 operation, after the partial reset is performed, the resetlevel voltage V_(RL) may be set to the power supply Vdd voltage or mayremain at the partial reset voltage.

Similar to Mode A1, Mode A2 requires that the reset read (RST read) becarried out immediately after the partial reset. Mode A2 will have afull well proportional to the sum of the PD and FD capacities at Vpr, aswell as the Tg capacity at the transfer gate “on” bias voltage. Theconversion gain will be inversely proportional to the sum of the PD, FD,and Tg capacitances.

Mode A3

In a third embodiment, a third CSM operating mode (Mode A3) isconfigured for single readout with the transfer gate signal Tg set lowduring integration and read out.

FIG. 10 is a timing diagram for CSM Operation Mode A3, utilizing singlereadout, with the transfer gate set low during integration and readoutaccording to one embodiment of the present invention. Under Mode A2operation, a partial reset is performed followed by the reset readoperation. The transfer gate signal Tg is deasserted after the partialreset and before the reset read. Light integration starts when thetransfer gate signal is deasserted until the data read operation.Following integration, the transfer gate signal Tg is pulsed high totransfer charge from the photodiode to the floating diffusion. When thephotodiode PD and the floating diffusion FD have reached a new potentialequilibrium, the transfer gate Tg is deasserted, and the floatingdiffusion FD is read out during the data read period.

In mode A3 operation, after the partial reset is performed, the resetlevel voltage V_(RL) may be set to the power supply Vdd voltage or mayremain at the partial reset voltage.

Similar to Mode A1, Mode A3 requires that the reset read (RST read) becarried out immediately after the partial reset. In Mode A3, the fullwell will be proportional to the PD capacity at Vpr, while CG will beinversely proportional to FD plus PD capacitance.

Multi-Readout Schemes

Mode B1

In a fourth embodiment, a fourth CSM operating mode (Mode B1) isconfigured for multi-readout with transfer gate signal Tg set high. ModeB1 is an extension of Mode A2 to multi-readout per frame.

FIG. 11 is a timing diagram for CSM Operation Mode B1, utilizingmulti-readout, with the transfer gate always high according to oneembodiment of the present invention. Mode B1 operates in the same manneras mode A2 where a partial reset is carried out and light integrationbegins when the reset signal RST is deasserted. In Mode B1, the transfergate Tg remains asserted after partial reset to allow the reset voltagevalue to be read out during the RST Read period. Furthermore, thetransfer gate signal Tg remains asserted after the reset read operationand remains asserted during the entire light integration period. In thismanner, charge collected by the photodiode is continuously distributedbetween the photodiode and the floating diffusion throughout theintegration period.

Under Mode B1, during the light integration period, with the transfergate signal Tg asserted high, the row select signal RS (curve 106) andthe control signal SH-S (curve 110) are periodically asserted to readout multiple samples of the light-dependent pixel voltage value at thePD/Tg/FD node. In this manner, multiple sampling of the light-dependentpixel voltage value is performed. At each sampling, the pixel value maybe stored digitally outside of the pixel array.

In mode B1 operation, after the partial reset is performed, the resetlevel voltage V_(RL) may be set to the power supply Vdd voltage or mayremain at the partial reset voltage.

In Mode B1, the full well will be proportional to the sum of the PD andFD capacities at Vpr, as well as the Tg capacity at the transfer gate“on” bias voltage. The conversion gain will be inversely proportional tothe sum of the PD, FD, and Tg capacitances.

Mode B2

In a fifth embodiment, a fifth CSM operating mode (Mode B2) isconfigured for multi-readout, with transfer gate signal Tg toggling highduring read. Mode B2 is an extension of Mode A1 to multi-readout perframe.

FIG. 12 is a timing diagram for CSM Operation Mode B2, utilizingmulti-readout, with the transfer gate toggling and set to high duringdata read according to one embodiment of the present invention. Mode B2operates in the same manner as mode A1 where a partial reset is carriedout and light integration begins when the reset signal RST isdeasserted. In Mode B2, the transfer gate Tg remains asserted afterpartial reset to allow the reset voltage value to be read out during theRST Read period.

After the reset read period and during the light integration period, thetransfer gate signal Tg is periodically asserted to transfer charge fromthe photodiode to the floating diffusion. More specifically, each timethe transfer gate signal Tg is asserted, the transfer gate signal has apulse width long enough for charge transfer to reach steady statebetween the photodiode PD and the floating diffusion FD. In embodimentsof the present invention, the transfer gate signal Tg pulse width is afunction of the PD-FD settling time and the time required for read outafter settling. During the time the transfer gate signal Tg is asserted,the row select signal RS and the control signal SH-S are asserted toread out the pixel value. The pixel value may be stored digitallyoutside of the pixel array. The transfer gate signal Tg is thendeasserted until a given integration period expires. The charge transferand read out process repeat throughout the light integration period toread out multiple samples of the light-dependent pixel value. At the endof the current frame, a partial reset is performed to start the nextframe.

In mode B2 operation, after the partial reset is performed, the resetlevel voltage V_(RL) may be set to the power supply Vdd voltage or mayremain at the partial reset voltage.

Mode B2 will need to have the reset level read (RST read) prior to startof integration. The full well will be proportional to the sum of the PDand FD capacities at the partial reset voltage Vpr, while the conversiongain will be inversely proportional to the sum of PD, FD, and Tgcapacitances.

Mode B3

In a sixth embodiment, a sixth CSM operating mode (Mode B3) isconfigured for multi-readout, with Tg toggling low during read. Mode B3is an extension of Mode A3 to multi-readout per frame.

FIG. 13 is a timing diagram for CSM Operation Mode B3 utilizingmulti-readout, with the transfer gate toggling and set low during dataread according to one embodiment of the present invention. Mode B3operates in the same manner as mode A3 where a partial reset is carriedout and light integration begins when the reset signal RST isdeasserted. In Mode B2, the transfer gate Tg is deasserted after partialreset and during the reset read period. After the reset read period andduring the light integration period, the transfer gate signal Tg isperiodically asserted to transfer charge from the photodiode to thefloating diffusion. However, the transfer gate signal Tg and the rowselect signal RS and the control signal SH-S are mutually exclusive.that is, the transfer gate signal Tg is asserted when the row selectsignal RS and the control signal SH-S are deasserted, and vice versa.

More specifically, after a first integration phase, the transfer gatesignal Tg is asserted with a pulse width long enough for charge transferto reach steady state between the photodiode PD and the floatingdiffusion FD. The transfer gate signal Tg is then set low, and the pixeldata is read out and stored digitally by asserting the row select signalRS and the control signal SH-S. The next integration phase starts, afterwhich the transfer gate signal Tg is again pulsed high long enough forthe PD and FD charges to reach steady state. The transfer gate signal Tgis again set low, and the pixel data is read out and stored digitally.The charge transfer and read out process repeats throughout the lightintegration period until the last data read. Multiple samples of thelight-dependent pixel value are thus obtained. At the end of the currentframe, a partial reset is performed to start the next frame.

Mode B3 will need to have the reset level read (RST read) prior to startof integration. In Mode B3, the full well will be proportional to the PDcapacity at the partial reset voltage Vpr, while the conversion gainwill be inversely proportional to FD plus PD capacitances.

Alternate Embodiments

In another embodiment, in any of the above operation modes, the partialreset may be preceded by a full reset to the pinning voltage of thephotodiode. The full reset may be performed to reduce noise.

According to another embodiment, regional timing control is used for animage sensor configured as a two-dimensional pixel array. In regionaltiming control, areas of the sensor that are receiving low light may beoperated in the high conversion gain mode, while other areas of thesensor receiving bright light may be operated in the low conversion gainmode. The size of a region can vary from 1 pixel to most of the pixelsof the array.

The above descriptions are illustrative only and are not intended to belimited. Other timing control may be used to operate the charge sharingmode within the scope of the present invention. Furthermore, the exacttiming will depend on factors such as pixel architecture (4T, digitalpixel, global shutter, etc). Other timing scheme may be used to realizethe high CG and the low CG operation modes.

SUMMARY

In summary, in embodiments of the present invention, an image sensor isconfigured to provide variable conversion gain without any additionalpixel circuitry.

In one embodiment, the image sensor is configured to operate in a highconversion gain mode and a low conversion gain mode where the lowconversion gain mode is realized through charge sharing between thefloating diffusion and the photodiode of a pixel circuit.

In one embodiment, the selection between the high conversion gainoperation mode and the low conversion gain operation mode is carried outby automatic control, such as by sensing the light level impinging onthe image sensor. In another embodiment, the selection between the highCG and low CG operation modes is user selected.

In one embodiment, the image sensor is configured to select one of thetwo operation modes on a regional basis. That is, a first group ofpixels in the image sensor may be operated at a first operation modewhile a second group of pixels in the image sensor may be operated at asecond operation mode.

According to another aspect of the present invention, a pixel of animage sensor is configured to operate in two or more operating modes. Ina first operation mode, the photodiode of the pixel is fully reset tothe photodiode pinning voltage. In a second operation mode, thephotodiode and the floating diffusion are reset to substantially thesame potential, with the reset potential being less then the photodiodepinning voltage, referred to as a partial reset.

In one embodiment, in the second operation mode, the photodiode of thepixel is fully reset before the partial reset.

In one embodiment, the reset potential is set by the voltage on thereset transistor. In one embodiment, a partial reset voltage is suppliedto the drain terminal of the reset transistor and the reset potential inthe second operation mode is set by the partial reset voltage.

The pixel circuit can be operated in a single read-out mode, multipleread-out mode, with the transfer gate signal held high or held low, asdescribed above with reference to FIGS. 8-13.

In another embodiment, the gate voltage of the transfer gate signal isselected to trade off the effect of dark current, speed, and lag.

The above detailed descriptions are provided to illustrate specificembodiments of the present invention and are not intended to belimiting. Numerous modifications and variations within the scope of thepresent invention are possible. The present invention is defined by theappended claims.

1. An image sensing device comprising: an array of light sensingelements, each light sensing element comprising a photodiode and aplurality of control transistors, the plurality of control transistorscomprising at least a transfer gate transistor and a reset transistor,the transfer gate transistor having a drain terminal being a floatingdiffusion node and a source terminal coupled to the photodiode, thereset transistor having a drain terminal coupled to a reset levelvoltage and a source terminal coupled to the floating diffusion node,wherein each light sensing element generates an output pixel voltageindicative of an intensity level of light impinging on the photodiode,and the plurality of control transistors are configured to controlreset, light integration, charge transfer and data read operations ofeach light sensing element; and wherein the light sensing element isconfigured to selectively operate in a first operation mode for highconversion gain or a second operation mode for low conversion gain, thereset level voltage being a positive power supply voltage in the firstoperation mode and the reset level voltage being a voltage slightly lessthan a pinning voltage of the photodiode in the second operation mode;and in the second operation mode, the photodiode and the floatingdiffusion node are reset to about the same voltage potential and arereset to a voltage potential below the pinning voltage during the resetoperation of the light sensing element.
 2. The image sensing device ofclaim 1, wherein in the second operation mode, during the chargetransfer operation with the transfer gate transistor is turned on,charge collected at the photodiode from the impinging lightequilibrating between the photodiode and the floating diffusion node. 3.The image sensing device of claim 1, wherein in the first operationmode, the photodiode is reset to the pinning voltage and the floatingdiffusion node is reset to the positive power supply voltage during thereset operation of the light sensing element.
 4. The image sensingdevice of claim 1, wherein the reset level voltage coupled to the drainterminal of the reset transistor is switchably connected to the positivepower supply voltage and a partial reset voltage being a voltageslightly less than a pinning voltage of the photodiode, a mode selectsignal selecting one of the positive power supply voltage and thepartial reset voltage for the reset level voltage.
 5. The image sensingdevice of claim 4, wherein the mode select signal is a signal indicativeof the light intensity level impinging on the array of light sensingelements.
 6. The image sensing device of claim 4, wherein the modeselect signal is generated from user input.
 7. The image sensing deviceof claim 1, wherein a first group of the light sensing elements in thearray is operated in the first operation mode while a second group ofthe light sensing elements in the array is operated in the secondoperation mode.
 8. The image sensing device of claim 1, wherein thetransfer gate transistor is controlled by a transfer gate signal and thereset transistor is controlled by a reset signal, the reset operationbeing carried out by asserting the transfer gate signal and the resetsignal simultaneously; and wherein the plurality of control transistorsfurther comprises a row select transistor configured to transfer chargeon the floating diffusion node to a bitline, the row select transistorbeing controlled by a row select signal for reading out the outputsignal of the photodiode during the data read operation.
 9. The imagesensing device of claim 8, wherein in the second operation mode, the rowselect signal is asserted following the reset operation to read out areset voltage value of the floating diffusion node.
 10. The imagesensing device of claim 8, wherein in the second operation mode, thetransfer gate signal is deasserted during at least a portion of thelight integration operation, and the transfer gate signal and the rowselect signal are asserted at the end of the light integration operationand during the data read operation to read out the output pixel voltage.11. The image sensing device of claim 8, wherein in the second operationmode, the transfer gate signal is asserted during the entire lightintegration operation, and the transfer gate signal and the row selectsignal are asserted during the data read operation to read out theoutput pixel voltage.
 12. The image sensing device of claim 8, whereinin the second operation mode, the transfer gate signal is deassertedduring at least a portion of the light integration operation; thetransfer gate signal is asserted near the end of the light integrationoperation to transfer charge from the photodiode to the floatingdiffusion node; and the transfer gate is deasserted while the row selectsignal is asserted during the data read operation to read out the outputpixel voltage.
 13. The image sensing device of claim 8, wherein in thesecond operation mode, the transfer gate signal is asserted during theentire light integration period, and the row select signal is assertedperiodically during the light integration operation to read out multiplesamples of the output pixel voltage.
 14. The image sensing device ofclaim 8, wherein in the second operation mode, the transfer gate signalis asserted periodically during the light integration period, thetransfer gate signal being asserted with a pulse width long enough toallow the charge transfer between the photodiode and the floatingdiffusion node to reach steady state, and the row select signal isasserted when the transfer gate signal is asserted to read out multiplesamples of the output pixel voltage.
 15. The image sensing device ofclaim 8, wherein in the second operation mode, the transfer gate signalis asserted periodically during the light integration period, thetransfer gate signal being asserted with a pulse width long enough toallow the charge transfer between the photodiode and the floatingdiffusion node to reach steady state, and the row select signal isasserted when the transfer gate signal is deasserted to read outmultiple samples of the output pixel voltage.
 16. A method in an imagesensing device, comprising: providing an array of light sensingelements, each light sensing element comprising a photodiode and aplurality of control transistors, the plurality of control transistorscomprising at least a transfer gate transistor and a reset transistor,the transfer gate transistor having a drain terminal being a floatingdiffusion node and a source terminal coupled to the photodiode, thereset transistor having a drain terminal coupled to a reset levelvoltage and a source terminal coupled to the floating diffusion node,the plurality of control transistors being configured to control reset,light integration, charge transfer and data read operations of eachlight sensing element; generating at each light sensing element anoutput pixel voltage indicative of an intensity level of light impingingon the photodiode; operating one or more light sensing elements in afirst operation mode for high conversion gain or a second operation modefor low conversion gain; providing a positive power supply voltage forthe reset level voltage to operate a light sensing element in the firstoperation mode; providing a voltage slightly less than a pinning voltageof the photodiode to operate a light sensing element in the secondoperation mode; and resetting one or more light sensing elements in thesecond operation mode, the photodiode and the floating diffusion nodebeing reset to about the same voltage potential and being reset to avoltage potential below the pinning voltage.
 17. The method of claim 16,further comprising: integrating charge at the photodiode as a functionof the impinging light; in the second operation mode, turning on thetransfer gate transistor of a light sensing element during the chargetransfer operation, charge collected at the photodiode from theimpinging light equilibrating between the photodiode and the floatingdiffusion node.
 18. The method of claim 16, further comprising:resetting one or more light sensing elements in the first operationmode, the photodiode being reset to the pinning voltage and the floatingdiffusion node being reset to the positive power supply voltage.
 19. Themethod of claim 16, further comprising: selecting between the firstoperation mode and the second operation mode based on a mode selectsignal, the mode select signal being a signal indicative of the lightintensity level impinging on the array of light sensing elements or asignal generated from user input.
 20. The method of claim 16, whereinoperating one or more light sensing elements in a first operation modefor high conversion gain or a second operation mode for low conversiongain comprises operating a first group of the light sensing elements inthe array in the first operation mode and operating a second group ofthe light sensing elements in the array in the second operation mode.